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Researchers developed a tellurium-hyperdoped silicon photodiode that detects short-wave infrared (SWIR) light using standard CMOS-compatible manufacturing. By combining hyperdoping with light-trapping micro-pyramids and a gold reflector, the device achieved record room-temperature detectivity (4×10¹⁰ Jones) and ~85% light absorption, paving the way for inexpensive SWIR cameras for smartphones, autonomous vehicles, medical imaging, and industrial sensing.

https://journals.aps.org/prl/abstract/10.1103/96rx-zx6l
Physical Review Letters Breakthrough in Short-Wavelength Infrared Quantum Efficiency in Te-Hyperdoped Silicon Photodetectors via Light-Trapping Strategies A new light-trapping architecture could lead to CMOS-compatible night-vision technology.
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