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Post #2448
497

Directly probing the carrier transfer length in 2D-material transistors
Cross-sectional scanning tunnelling microscopy shows a 2 nm carrier transfer length in bismuth-contacted monolayer MoS2 transistors, defining metal-contact scaling limits for sub-10 nm 2D electronic devices.
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Cross-sectional scanning tunnelling microscopy shows a 2 nm carrier transfer length in bismuth-contacted monolayer MoS2 transistors, defining metal-contact scaling limits for sub-10 nm 2D electronic devices.
Read Full Story πΉ Subscribe
#News β‘οΈ #AI β‘οΈ #Tech









